Nanometer-Scale Creation and Characterization of Trapped Charge in SiO2 Films Using Ballistic Electron Emission Microscopy
Phys Rev Lett
.
1996 Jul 1;77(1):91-94.
doi: 10.1103/PhysRevLett.77.91.
Authors
B Kaczer
,
Z Meng
,
JP Pelz
PMID:
10061779
DOI:
10.1103/PhysRevLett.77.91
No abstract available