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Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size.
Beilstein J Nanotechnol. 2024 Mar 7;15:279-296. doi: 10.3762/bjnano.15.26. eCollection 2024.
Beilstein J Nanotechnol. 2024.
PMID: 38476324
Free PMC article.
Negative Magnetoresistivity in Highly Doped n-Type GaN.
Konczewicz L, Iwinska M, Litwin-Staszewska E, Zajac M, Turski H, Bockowski M, Schiavon D, Chlipała M, Juillaguet S, Contreras S.
Konczewicz L, et al. Among authors: juillaguet s.
Materials (Basel). 2022 Oct 11;15(20):7069. doi: 10.3390/ma15207069.
Materials (Basel). 2022.
PMID: 36295135
Free PMC article.
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Phonon strain-shift coefficients of Si1-xGex grown on Ge(001).
Stoehr M, Aubel D, Juillaguet S, Bischoff JL, Kubler L, Bolmont D, Hamdani F, Fraisse B, Fourcade R.
Stoehr M, et al. Among authors: juillaguet s.
Phys Rev B Condens Matter. 1996 Mar 15;53(11):6923-6926. doi: 10.1103/physrevb.53.6923.
Phys Rev B Condens Matter. 1996.
PMID: 9982123
No abstract available.
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