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hudolin huang
(1 results)?
A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure.
Micromachines (Basel). 2019 Dec 5;10(12):848. doi: 10.3390/mi10120848.
Micromachines (Basel). 2019.
PMID: 31817374
Free PMC article.
Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices.
Huang H, Li F, Sun Z, Cao Y.
Huang H, et al.
Micromachines (Basel). 2018 Dec 14;9(12):658. doi: 10.3390/mi9120658.
Micromachines (Basel). 2018.
PMID: 30558127
Free PMC article.
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