A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

Zhonghao Sun; Huolin Huang; Nan Sun; Pengcheng Tao; Cezhou Zhao; Yung C Liang

doi:10.3390/mi10120848

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

Micromachines (Basel). 2019 Dec 5;10(12):848. doi: 10.3390/mi10120848.

Authors

Zhonghao Sun¹, Huolin Huang¹, Nan Sun¹, Pengcheng Tao¹, Cezhou Zhao², Yung C Liang³

Affiliations

¹ School of Optoelectronic Engineering and Instrumentation Science & School of Microelectronics, Dalian University of Technology, Dalian 116024, China.
² Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
³ Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore.

Abstract

A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mΩ·cm² while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

Keywords: gallium nitride; high electron mobility transistors; normally-off operation; vertical gate structure; wide-bandgap semiconductor.

Abstract

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