Du Y - Search Results

1

Radamson HH, He X, Zhang Q, Liu J, Cui H, Xiang J, Kong Z, Xiong W, Li J, Gao J, Yang H, Gu S, Zhao X, Du Y, Yu J, Wang G. Radamson HH, et al. Among authors: du y. Micromachines (Basel). 2019 Apr 30;10(5):293. doi: 10.3390/mi10050293. Micromachines (Basel). 2019. PMID: 31052223 Free PMC article. Review.

2

State of the Art and Future Perspectives in Advanced CMOS Technology.

Radamson HH, Zhu H, Wu Z, He X, Lin H, Liu J, Xiang J, Kong Z, Xiong W, Li J, Cui H, Gao J, Yang H, Du Y, Xu B, Li B, Zhao X, Yu J, Dong Y, Wang G. Radamson HH, et al. Among authors: du y. Nanomaterials (Basel). 2020 Aug 7;10(8):1555. doi: 10.3390/nano10081555. Nanomaterials (Basel). 2020. PMID: 32784801 Free PMC article. Review.

3

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD.

Du Y, Kong Z, Toprak MS, Wang G, Miao Y, Xu B, Yu J, Li B, Lin H, Han J, Dong Y, Wang W, Radamson HH. Du Y, et al. Nanomaterials (Basel). 2021 Apr 6;11(4):928. doi: 10.3390/nano11040928. Nanomaterials (Basel). 2021. PMID: 33917367 Free PMC article.

4

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform.

Zhao X, Wang G, Lin H, Du Y, Luo X, Kong Z, Su J, Li J, Xiong W, Miao Y, Li H, Guo G, Radamson HH. Zhao X, et al. Among authors: du y. Nanomaterials (Basel). 2021 Apr 27;11(5):1125. doi: 10.3390/nano11051125. Nanomaterials (Basel). 2021. PMID: 33925305 Free PMC article.

5

Strain Modulation of Selectively and/or Globally Grown Ge Layers.

Du Y, Wang G, Miao Y, Xu B, Li B, Kong Z, Yu J, Zhao X, Lin H, Su J, Han J, Liu J, Dong Y, Wang W, Radamson HH. Du Y, et al. Nanomaterials (Basel). 2021 May 28;11(6):1421. doi: 10.3390/nano11061421. Nanomaterials (Basel). 2021. PMID: 34071167 Free PMC article.

6

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon.

Du Y, Xu B, Wang G, Miao Y, Li B, Kong Z, Dong Y, Wang W, Radamson HH. Du Y, et al. Nanomaterials (Basel). 2022 Feb 22;12(5):741. doi: 10.3390/nano12050741. Nanomaterials (Basel). 2022. PMID: 35269230 Free PMC article. Review.

7

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs.

Xu B, Wang G, Du Y, Miao Y, Wu Y, Kong Z, Su J, Li B, Yu J, Radamson HH. Xu B, et al. Among authors: du y. Nanomaterials (Basel). 2022 Apr 19;12(9):1403. doi: 10.3390/nano12091403. Nanomaterials (Basel). 2022. PMID: 35564112 Free PMC article.

8

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.

Xu B, Du Y, Wang G, Xiong W, Kong Z, Zhao X, Miao Y, Wang Y, Lin H, Su J, Li B, Wu Y, Radamson HH. Xu B, et al. Among authors: du y. Materials (Basel). 2022 May 18;15(10):3594. doi: 10.3390/ma15103594. Materials (Basel). 2022. PMID: 35629618 Free PMC article.

9

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

Xu B, Wang G, Du Y, Miao Y, Li B, Zhao X, Lin H, Yu J, Su J, Dong Y, Ye T, Radamson HH. Xu B, et al. Among authors: du y. Nanomaterials (Basel). 2022 Aug 5;12(15):2704. doi: 10.3390/nano12152704. Nanomaterials (Basel). 2022. PMID: 35957135 Free PMC article.

10

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.

Du Y, Wei W, Xu B, Wang G, Li B, Miao Y, Zhao X, Kong Z, Lin H, Yu J, Su J, Dong Y, Wang W, Ye T, Zhang J, Radamson HH. Du Y, et al. Micromachines (Basel). 2022 Sep 22;13(10):1579. doi: 10.3390/mi13101579. Micromachines (Basel). 2022. PMID: 36295932 Free PMC article.

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