Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Buqing Xu; Guilei Wang; Yong Du; Yuanhao Miao; Ben Li; Xuewei Zhao; Hongxiao Lin; Jiahan Yu; Jiale Su; Yan Dong; Tianchun Ye; Henry H Radamson

doi:10.3390/nano12152704

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Nanomaterials (Basel). 2022 Aug 5;12(15):2704. doi: 10.3390/nano12152704.

Authors

Buqing Xu^{1

2}, Guilei Wang³, Yong Du¹, Yuanhao Miao^{1

4}, Ben Li⁴, Xuewei Zhao^{1

4}, Hongxiao Lin⁴, Jiahan Yu^{1

2}, Jiale Su¹, Yan Dong^{1

4}, Tianchun Ye^{1

4}, Henry H Radamson⁴

Affiliations

¹ Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
² University of Chinese Academy of Sciences, Beijing 100029, China.
³ Beijing Superstring Academy of Memory Technology, Beijing 100176, China.
⁴ Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.

Abstract

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual substrate on Si wafer. No patterned substrate or sophisticated superlattice defect-filtering layer was involved. Thanks to the improved quality of the comprehensively modified GaAs crystal with low defect density, the room temperature emission wavelength of this laser was allocated at 1320 nm, with a threshold current density of 24.4 A/cm^-2 per layer and a maximum single-facet output power reaching 153 mW at 10 °C. The maximum operation temperature reaches 80 °C. This work provides a feasible and promising proposal for the integration of an efficient O-band laser with a standard Si platform in the near future.

Keywords: GaAs virtual substrate; InAs/GaAs lasers; Si photonics; epitaxial growth.

Grants and funding

This work was supported by the construction of the high-level innovation research institute from the Guangdong Greater Bay Area Institute of Integrated Circuit and System (Grant No. 2019B090909006) and the projects of the construction of new research and development institutions (Grant No. 2019B090904015) and in part by the National Key Research and Development Program of China (Grant No. 2016YFA0301701), the Youth Innovation Promotion Association of CAS (Grant No. 2020037) and the National Natural Science Foundation of China (Grant No. 92064002).