Cros A - Search Results

1

Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation.

Andres-Penares D, Cros A, Martínez-Pastor JP, Sánchez-Royo JF. Andres-Penares D, et al. Among authors: cros a. Nanotechnology. 2017 Apr 28;28(17):175701. doi: 10.1088/1361-6528/aa669e. Epub 2017 Mar 14. Nanotechnology. 2017. PMID: 28291012

2

Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap.

Brotons-Gisbert M, Andres-Penares D, Suh J, Hidalgo F, Abargues R, Rodríguez-Cantó PJ, Segura A, Cros A, Tobias G, Canadell E, Ordejón P, Wu J, Martínez-Pastor JP, Sánchez-Royo JF. Brotons-Gisbert M, et al. Among authors: cros a. Nano Lett. 2016 May 11;16(5):3221-9. doi: 10.1021/acs.nanolett.6b00689. Epub 2016 Apr 19. Nano Lett. 2016. PMID: 27080194

3

Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy.

Minj A, Cros A, Auzelle T, Pernot J, Daudin B. Minj A, et al. Among authors: cros a. Nanotechnology. 2016 Sep 23;27(38):385202. doi: 10.1088/0957-4484/27/38/385202. Epub 2016 Aug 12. Nanotechnology. 2016. PMID: 27518150

4

Optical contrast of 2D InSe on SiO₂/Si and transparent substrates using bandpass filters.

Brotons-Gisbert M, Andres-Penares D, Martínez-Pastor JP, Cros A, Sánchez-Royo JF. Brotons-Gisbert M, et al. Among authors: cros a. Nanotechnology. 2017 Mar 17;28(11):115706. doi: 10.1088/1361-6528/aa5bb1. Epub 2017 Jan 24. Nanotechnology. 2017. PMID: 28117306

5

Resonant Raman scattering of core-shell GaN/AlN nanowires.

Cros A, Cristóbal AG, Hestroffer K, Daudin B, Wang J, Demangeot F, Péchou R. Cros A, et al. Nanotechnology. 2020 Dec 2;32(8). doi: 10.1088/1361-6528/abc710. Nanotechnology. 2020. PMID: 33142269

6

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes.

Daudin B, Siladie AM, Gruart M, den Hertog M, Bougerol C, Haas B, Rouvière JL, Robin E, Recio-Carretero MJ, Garro N, Cros A. Daudin B, et al. Among authors: cros a. Nanotechnology. 2021 Feb 19;32(8):085606. doi: 10.1088/1361-6528/abc780. Nanotechnology. 2021. PMID: 33147580

7

Ultrathin GaN quantum wells in AlN nanowires for UV-C emission.

Vermeersch R, Jacopin G, Castioni F, Rouvière JL, García-Cristóbal A, Cros A, Pernot J, Daudin B. Vermeersch R, et al. Among authors: cros a. Nanotechnology. 2023 Apr 21;34(27). doi: 10.1088/1361-6528/accaeb. Nanotechnology. 2023. PMID: 37023726

8

Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy.

Daudin B, Donatini F, Bougerol C, Gayral B, Bellet-Amalric E, Vermeersch R, Feldberg N, Rouvière JL, Recio Carretero MJ, Garro N, Garcia-Orrit S, Cros A. Daudin B, et al. Among authors: cros a. Nanotechnology. 2021 Jan 8;32(2):025601. doi: 10.1088/1361-6528/abb6a5. Nanotechnology. 2021. PMID: 32906087

9

The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.

Bougerol C, Songmuang R, Camacho D, Niquet YM, Mata R, Cros A, Daudin B. Bougerol C, et al. Among authors: cros a. Nanotechnology. 2009 Jul 22;20(29):295706. doi: 10.1088/0957-4484/20/29/295706. Epub 2009 Jul 1. Nanotechnology. 2009. PMID: 19567953

10

The structural properties of GaN/AlN core-shell nanocolumn heterostructures.

Hestroffer K, Mata R, Camacho D, Leclere C, Tourbot G, Niquet YM, Cros A, Bougerol C, Renevier H, Daudin B. Hestroffer K, et al. Among authors: cros a. Nanotechnology. 2010 Oct 15;21(41):415702. doi: 10.1088/0957-4484/21/41/415702. Epub 2010 Sep 16. Nanotechnology. 2010. PMID: 20844326

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