We have analyzed the electron-phonon coupling in GaN/AlN core-shell nanowires by means of Raman scattering excited at various wavelengths in the ultraviolet spectral range (335, 325 and 300 nm) and as a function of the AlN shell thickness. The detailed analysis of the multi-phonon spectra evidences important differences with excitation energy. Under 325 and 300 nm excitation the Raman process is mediated by the allowedA1(LO) phonon mode, where the atoms vibrate along the NW axis. Considering its selection rules, this mode is easily accessible in backscattering along the wurtzitecaxis. Interestingly, for 335 nm excitation the scattering process is instead mediated by theE1(LO) phonon mode, where atoms vibrate in thec-plane and that is forbidden in this configuration. This change is ascribed to the band anticrossing caused by the uniaxial strain imposed by the AlN shell and the proximity, at this particular excitation energy, of real electronic transitions separated by the energy of the longitudinal optical phonon modes. The energy and character of the electronic bands can be tuned by varying the AlN shell thickness, a degree of freedom unique to core-shell nanowires. The interpretation of the experimental results is supported by calculations of the electronic transitions of GaN under uniaxial strain performed within the framework of ak · pmodel.
Keywords: Raman scattering; core–shell nanowires; nitride semiconductors; ultraviolet; uniaxial strain.
© 2020 IOP Publishing Ltd.