Cros A - Search Results

1

Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap.

Brotons-Gisbert M, Andres-Penares D, Suh J, Hidalgo F, Abargues R, Rodríguez-Cantó PJ, Segura A, Cros A, Tobias G, Canadell E, Ordejón P, Wu J, Martínez-Pastor JP, Sánchez-Royo JF. Brotons-Gisbert M, et al. Among authors: cros a. Nano Lett. 2016 May 11;16(5):3221-9. doi: 10.1021/acs.nanolett.6b00689. Epub 2016 Apr 19. Nano Lett. 2016. PMID: 27080194

2

Optical contrast of 2D InSe on SiO₂/Si and transparent substrates using bandpass filters.

Brotons-Gisbert M, Andres-Penares D, Martínez-Pastor JP, Cros A, Sánchez-Royo JF. Brotons-Gisbert M, et al. Among authors: cros a. Nanotechnology. 2017 Mar 17;28(11):115706. doi: 10.1088/1361-6528/aa5bb1. Epub 2017 Jan 24. Nanotechnology. 2017. PMID: 28117306

3

Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation.

Andres-Penares D, Cros A, Martínez-Pastor JP, Sánchez-Royo JF. Andres-Penares D, et al. Among authors: cros a. Nanotechnology. 2017 Apr 28;28(17):175701. doi: 10.1088/1361-6528/aa669e. Epub 2017 Mar 14. Nanotechnology. 2017. PMID: 28291012

4

Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy.

Minj A, Cros A, Garro N, Colchero J, Auzelle T, Daudin B. Minj A, et al. Among authors: cros a. Nano Lett. 2015 Oct 14;15(10):6770-6. doi: 10.1021/acs.nanolett.5b02607. Epub 2015 Sep 23. Nano Lett. 2015. PMID: 26380860

5

Si Donor Incorporation in GaN Nanowires.

Fang Z, Robin E, Rozas-Jiménez E, Cros A, Donatini F, Mollard N, Pernot J, Daudin B. Fang Z, et al. Among authors: cros a. Nano Lett. 2015 Oct 14;15(10):6794-801. doi: 10.1021/acs.nanolett.5b02634. Epub 2015 Oct 6. Nano Lett. 2015. PMID: 26426262

6

Mg and In Codoped p-type AlN Nanowires for pn Junction Realization.

Siladie AM, Jacopin G, Cros A, Garro N, Robin E, Caliste D, Pochet P, Donatini F, Pernot J, Daudin B. Siladie AM, et al. Among authors: cros a. Nano Lett. 2019 Dec 11;19(12):8357-8364. doi: 10.1021/acs.nanolett.9b01394. Epub 2019 Nov 14. Nano Lett. 2019. PMID: 31724873

7

Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy.

Minj A, Cros A, Auzelle T, Pernot J, Daudin B. Minj A, et al. Among authors: cros a. Nanotechnology. 2016 Sep 23;27(38):385202. doi: 10.1088/0957-4484/27/38/385202. Epub 2016 Aug 12. Nanotechnology. 2016. PMID: 27518150

8

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC.

Sancho-Juan O, Cantarero A, Garro N, Cros A, Martínez-Criado G, Salomé M, Susini J, Olguín D, Dhar S. Sancho-Juan O, et al. Among authors: cros a. J Phys Condens Matter. 2009 Jul 22;21(29):295801. doi: 10.1088/0953-8984/21/29/295801. Epub 2009 Jul 3. J Phys Condens Matter. 2009. PMID: 21828536

9

The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.

Bougerol C, Songmuang R, Camacho D, Niquet YM, Mata R, Cros A, Daudin B. Bougerol C, et al. Among authors: cros a. Nanotechnology. 2009 Jul 22;20(29):295706. doi: 10.1088/0957-4484/20/29/295706. Epub 2009 Jul 1. Nanotechnology. 2009. PMID: 19567953

10

The structural properties of GaN/AlN core-shell nanocolumn heterostructures.

Hestroffer K, Mata R, Camacho D, Leclere C, Tourbot G, Niquet YM, Cros A, Bougerol C, Renevier H, Daudin B. Hestroffer K, et al. Among authors: cros a. Nanotechnology. 2010 Oct 15;21(41):415702. doi: 10.1088/0957-4484/21/41/415702. Epub 2010 Sep 16. Nanotechnology. 2010. PMID: 20844326

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