1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.
He W, Li J, Liao Z, Lin F, Wu J, Wang B, Wang M, Liu N, Chiu HC, Kuo HC, Lin X, Li J, Liu X.
He W, et al. Among authors: chiu hc.
Nanoscale Res Lett. 2022 Jan 15;17(1):14. doi: 10.1186/s11671-022-03653-z.
Nanoscale Res Lett. 2022.
PMID: 35032235
Free PMC article.