Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Chong-Rong Huang; Hsien-Chin Chiu; Chia-Hao Liu; Hsiang-Chun Wang; Hsuan-Ling Kao; Chih-Tien Chen; Kuo-Jen Chang

doi:10.3390/membranes11110848

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Membranes (Basel). 2021 Oct 30;11(11):848. doi: 10.3390/membranes11110848.

Authors

Chong-Rong Huang¹, Hsien-Chin Chiu^{1

2}, Chia-Hao Liu¹, Hsiang-Chun Wang¹, Hsuan-Ling Kao¹, Chih-Tien Chen³, Kuo-Jen Chang³

Affiliations

¹ Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan.
² Department of Radiation Oncology, Chang Gung Memorial Hospital, Chang Gung University, Taoyuan 333, Taiwan.
³ National Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Taoyuan 333, Taiwan.

Abstract

In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (I_DS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower I_DS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.

Keywords: QST substrate; back-barrier layer; high thermal conductivity.