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Frequency Mixing with HfO2-Based Ferroelectric Transistors.
ACS Appl Mater Interfaces. 2020 Oct 7;12(40):44919-44925. doi: 10.1021/acsami.0c11155. Epub 2020 Sep 28.
ACS Appl Mater Interfaces. 2020.
PMID: 32940452
Ferroelectric field-effect transistors based on HfO2: a review.
Mulaosmanovic H, Breyer ET, Dünkel S, Beyer S, Mikolajick T, Slesazeck S.
Mulaosmanovic H, et al. Among authors: breyer et.
Nanotechnology. 2021 Sep 22;32(50). doi: 10.1088/1361-6528/ac189f.
Nanotechnology. 2021.
PMID: 34320479
Review.
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