Ferroelectric field-effect transistors based on HfO2: a review

Halid Mulaosmanovic; Evelyn T Breyer; Stefan Dünkel; Sven Beyer; Thomas Mikolajick; Stefan Slesazeck

doi:10.1088/1361-6528/ac189f

Ferroelectric field-effect transistors based on HfO₂: a review

Nanotechnology. 2021 Sep 22;32(50). doi: 10.1088/1361-6528/ac189f.

Authors

Halid Mulaosmanovic¹, Evelyn T Breyer¹, Stefan Dünkel², Sven Beyer², Thomas Mikolajick^{1

3}, Stefan Slesazeck¹

Affiliations

¹ NaMLab gGmbH, 01187 Dresden, Germany.
² GlobalFoundries, Dresden Module One LLC & Co. KG, 01109 Dresden, Germany.
³ Chair of Nanoelectronics, TU Dresden, 01062 Dresden, Germany.

PMID: 34320479
DOI: 10.1088/1361-6528/ac189f

Abstract

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO₂), ten years after the first report on such a device. With a focus on the use of FeFET for nonvolatile memory application, we discuss its basic operation principles, switching mechanisms, device types, material properties and array structures. Key device performance metrics such as cycling endurance, retention, memory window, multi-level operation and scaling capability are analyzed. We also briefly survey recent developments in alternative applications for FeFETs including neuromorphic and in-memory computing as well as radiofrequency devices.

Keywords: ferroelectric FET (FeFET); ferroelectric field-effect transistor; ferroelectric hafnium oxide; ferroelectric memory; ferroelectric switching; nonvolatile memory; solid-state memory.

Publication types

Review