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Voltage-dependent synaptic plasticity: Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential.
Front Neurosci. 2022 Oct 21;16:983950. doi: 10.3389/fnins.2022.983950. eCollection 2022.
Front Neurosci. 2022.
PMID: 36340782
Free PMC article.
Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior.
Palhares JHQ, Beilliard Y, Alibart F, Bonturim E, de Florio DZ, Fonseca FC, Drouin D, Ferlauto AS.
Palhares JHQ, et al. Among authors: beilliard y.
Nanotechnology. 2021 Jul 12;32(40). doi: 10.1088/1361-6528/ac0e67.
Nanotechnology. 2021.
PMID: 34167106
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Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2resistive memories (2020Nanotechnology31 445205).
Beilliard Y, Paquette F, Brousseau F, Ecoffey S, Alibart F, Drouin D.
Beilliard Y, et al.
Nanotechnology. 2020 Sep 24;31(49). doi: 10.1088/1361-6528/abb301.
Nanotechnology. 2020.
PMID: 35166695
No abstract available.
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Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories.
Beilliard Y, Paquette F, Brousseau F, Ecoffey S, Alibart F, Drouin D.
Beilliard Y, et al.
Nanotechnology. 2020 Oct 30;31(44):445205. doi: 10.1088/1361-6528/aba6b4. Epub 2020 Jul 16.
Nanotechnology. 2020.
PMID: 32674084
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