Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2resistive memories (2020 Nanotechnology 31 445205)

Yann Beilliard; François Paquette; Frédéric Brousseau; Serge Ecoffey; Fabien Alibart; Dominique Drouin

doi:10.1088/1361-6528/abb301

Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al₂O₃/TiO₂resistive memories (2020 Nanotechnology 31 445205)

Nanotechnology. 2020 Sep 24;31(49). doi: 10.1088/1361-6528/abb301.

Authors

Yann Beilliard^{1

2

3}, François Paquette^{1

2}, Frédéric Brousseau^{1

2}, Serge Ecoffey^{1

2}, Fabien Alibart^{1

2

4}, Dominique Drouin^{1

2

3}

Affiliations

¹ Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke J1K 0A5, Canada.
² Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463-3IT, CNRS, Sherbrooke J1K 0A5, Canada.
³ Institut Quantique (IQ), Université de Sherbrooke, Sherbrooke J1K 2R1, Canada.
⁴ Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Université de Lille, 59650 Villeneuve d'Ascq, France.

PMID: 35166695
DOI: 10.1088/1361-6528/abb301

No abstract available

Publication types

Published Erratum