Banerjee S - Search Results

1

Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide.

Chen K, Roy A, Rai A, Valsaraj A, Meng X, He F, Xu X, Register LF, Banerjee S, Wang Y. Chen K, et al. Among authors: banerjee s. ACS Appl Mater Interfaces. 2018 Jan 10;10(1):1125-1131. doi: 10.1021/acsami.7b15478. Epub 2017 Dec 19. ACS Appl Mater Interfaces. 2018. PMID: 29226670

2

Density functional theory based study of graphene and dielectric oxide interfaces.

Jadaun P, Banerjee SK, Register LF, Sahu B. Jadaun P, et al. J Phys Condens Matter. 2011 Dec 21;23(50):505503. doi: 10.1088/0953-8984/23/50/505503. Epub 2011 Nov 28. J Phys Condens Matter. 2011. PMID: 22119858

3

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Fallahazad B, et al. Among authors: banerjee sk. Nano Lett. 2015 Jan 14;15(1):428-33. doi: 10.1021/nl503756y. Epub 2014 Dec 8. Nano Lett. 2015. PMID: 25436861

4

Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Corbet CM, et al. ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24. ACS Nano. 2015. PMID: 25514177

5

Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

Roy A, Guchhait S, Dey R, Pramanik T, Hsieh CC, Rai A, Banerjee SK. Roy A, et al. Among authors: banerjee sk. ACS Nano. 2015 Apr 28;9(4):3772-9. doi: 10.1021/nn5065716. Epub 2015 Apr 13. ACS Nano. 2015. PMID: 25848950

6

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Rai A, et al. Among authors: banerjee sk. Nano Lett. 2015 Jul 8;15(7):4329-36. doi: 10.1021/acs.nanolett.5b00314. Epub 2015 Jun 26. Nano Lett. 2015. PMID: 26091062

7

Radio Frequency Transistors and Circuits Based on CVD MoS2.

Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S. Sanne A, et al. Among authors: banerjee s. Nano Lett. 2015 Aug 12;15(8):5039-45. doi: 10.1021/acs.nanolett.5b01080. Epub 2015 Jul 8. Nano Lett. 2015. PMID: 26134588

8

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.

Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. Movva HC, et al. Among authors: banerjee sk. ACS Nano. 2015 Oct 27;9(10):10402-10. doi: 10.1021/acsnano.5b04611. Epub 2015 Sep 14. ACS Nano. 2015. PMID: 26343531

9

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.

Chang HY, Yogeesh MN, Ghosh R, Rai A, Sanne A, Yang S, Lu N, Banerjee SK, Akinwande D. Chang HY, et al. Among authors: banerjee sk. Adv Mater. 2016 Mar 2;28(9):1818-23. doi: 10.1002/adma.201504309. Epub 2015 Dec 28. Adv Mater. 2016. PMID: 26707841

10

Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Roy A, et al. Among authors: banerjee sk. ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7396-402. doi: 10.1021/acsami.6b00961. Epub 2016 Mar 11. ACS Appl Mater Interfaces. 2016. PMID: 26939890

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