Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

Hsiao-Yu Chang; Maruthi Nagavalli Yogeesh; Rudresh Ghosh; Amritesh Rai; Atresh Sanne; Shixuan Yang; Nanshu Lu; Sanjay Kumar Banerjee; Deji Akinwande

doi:10.1002/adma.201504309

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

Adv Mater. 2016 Mar 2;28(9):1818-23. doi: 10.1002/adma.201504309. Epub 2015 Dec 28.

Authors

Hsiao-Yu Chang¹, Maruthi Nagavalli Yogeesh¹, Rudresh Ghosh¹, Amritesh Rai¹, Atresh Sanne¹, Shixuan Yang², Nanshu Lu², Sanjay Kumar Banerjee¹, Deji Akinwande¹

Affiliations

¹ Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
² Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, TX, 78712, USA.

PMID: 26707841
DOI: 10.1002/adma.201504309

Abstract

Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.

Keywords: 2D materials; CVD-growth; flexible electronics; molybdenum disulfide; radio frequency.