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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures.
Materials (Basel). 2022 Jan 31;15(3):1118. doi: 10.3390/ma15031118.
Materials (Basel). 2022.
PMID: 35161062
Free PMC article.
Direct Auger recombination and density-dependent hole diffusion in InN.
Aleksiejūnas R, Podlipskas Ž, Nargelas S, Kadys A, Kolenda M, Nomeika K, Mickevičius J, Tamulaitis G.
Aleksiejūnas R, et al.
Sci Rep. 2018 Mar 15;8(1):4621. doi: 10.1038/s41598-018-22832-6.
Sci Rep. 2018.
PMID: 29545555
Free PMC article.
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Spectral dependence of THz emission from InN and InGaN layers.
Norkus R, Aleksiejūnas R, Kadys A, Kolenda M, Tamulaitis G, Krotkus A.
Norkus R, et al. Among authors: aleksiejunas r.
Sci Rep. 2019 May 8;9(1):7077. doi: 10.1038/s41598-019-43642-4.
Sci Rep. 2019.
PMID: 31068629
Free PMC article.
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The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface.
Podlipskas Ž, Jurkevičius J, Kadys A, Miasojedovas S, Malinauskas T, Aleksiejūnas R.
Podlipskas Ž, et al. Among authors: aleksiejunas r.
Sci Rep. 2019 Nov 22;9(1):17346. doi: 10.1038/s41598-019-53732-y.
Sci Rep. 2019.
PMID: 31757996
Free PMC article.
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Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content.
Saxena T, Shur M, Nargelas S, Podlipskas Ž, Aleksiejūnas R, Tamulaitis G, Shatalov M, Yang J, Gaska R.
Saxena T, et al. Among authors: aleksiejunas r.
Opt Express. 2015 Jul 27;23(15):19646-55. doi: 10.1364/OE.23.019646.
Opt Express. 2015.
PMID: 26367622
Free article.
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Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers.
Jarasiunas K, Aleksiejunas R, Malinauskas T, Gudelis V, Tamulevicius T, Tamulevicius S, Guobiene A, Usikov A, Dmitriev V, Gerritsen HJ.
Jarasiunas K, et al. Among authors: aleksiejunas r.
Rev Sci Instrum. 2007 Mar;78(3):033901. doi: 10.1063/1.2712788.
Rev Sci Instrum. 2007.
PMID: 17411189
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Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives.
Ščajev P, Qin C, Aleksieju Nas RN, Baronas P, Miasojedovas S, Fujihara T, Matsushima T, Adachi C, Juršėnas S.
Ščajev P, et al.
J Phys Chem Lett. 2018 Jun 21;9(12):3167-3172. doi: 10.1021/acs.jpclett.8b01155. Epub 2018 May 31.
J Phys Chem Lett. 2018.
PMID: 29806463
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Laser-Patterned Alumina Mask and Mask-Less Dry Etch of Si for Light Trapping with Photonic Crystal Structures.
Maksimovic J, Mu H, Smith D, Katkus T, Vaičiulis M, Aleksiejūnas R, Seniutinas G, Ng SH, Juodkazis S.
Maksimovic J, et al. Among authors: aleksiejunas r.
Micromachines (Basel). 2023 Feb 26;14(3):550. doi: 10.3390/mi14030550.
Micromachines (Basel). 2023.
PMID: 36984957
Free PMC article.
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