Ultra-short 230 fs laser pulses of a 515 nm wavelength were tightly focused onto 700 nm focal spots and utilised in opening ∼0.4-1 μm holes in alumina Al2O3 etch masks with a 20-50 nm thickness. Such dielectric masks simplify the fabrication of photonic crystal (PhC) light-trapping patterns for the above-Lambertian performance of high-efficiency solar cells. The conditions of the laser ablation of transparent etch masks and the effects sub-surface Si modifications were revealed by plasma etching, numerical modelling, and minority carrier lifetime measurements. Mask-less patterning of Si is proposed using fs laser direct writing for dry plasma etching of Si.
Keywords: Lambertian limit; Si solar cells; ablation; dry etch; light trapping.