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Correction: Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation.
RSC Adv. 2023 May 11;13(21):14472. doi: 10.1039/d3ra90040a. eCollection 2023 May 9.
RSC Adv. 2023.
PMID: 37180013
Free PMC article.
Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation.
Nawwar MA, Abo Ghazala MS, Sharaf El-Deen LM, Anis B, El-Shaer A, Elseman AM, Rashad MM, Kashyout AEB.
Nawwar MA, et al. Among authors: abo ghazala ms.
RSC Adv. 2023 Mar 20;13(14):9154-9167. doi: 10.1039/d3ra00805c. eCollection 2023 Mar 20.
RSC Adv. 2023.
PMID: 36950705
Free PMC article.
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Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices.
Nawwar MA, Abo Ghazala MS, Sharaf El-Deen LM, Kashyout AEB.
Nawwar MA, et al. Among authors: abo ghazala ms.
RSC Adv. 2022 Aug 30;12(38):24518-24554. doi: 10.1039/d2ra04181b. eCollection 2022 Aug 30.
RSC Adv. 2022.
PMID: 36128382
Free PMC article.
Review.
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Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation.
Abo Ghazala MS, Othman HA, Sharaf El-Deen LM, Nawwar MA, Kashyout AEB.
Abo Ghazala MS, et al.
ACS Omega. 2020 Oct 16;5(42):27633-27644. doi: 10.1021/acsomega.0c04206. eCollection 2020 Oct 27.
ACS Omega. 2020.
PMID: 33134727
Free PMC article.
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