Correction: Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation

RSC Adv. 2023 May 11;13(21):14472. doi: 10.1039/d3ra90040a. eCollection 2023 May 9.

¹ Physics Department, Faculty of Science, Menoufia University Menoufia Shebin El-Koom 32511 Egypt mohamed.nawwar@science.menofia.edu.eg.
² Spectroscopy Department, Physics Research Institute, National Research Centre 33 El Bohouth St., Dokki Giza 12622 Egypt.
³ Physics Department, Faculty of Science, Kafrelsheikh University KafrelSheikh 33516 Egypt.
⁴ Electronic & Magnetic Materials Department, Advanced Materials Institute, Central Metallurgical Research & Development Institute (CMRDI) Helwan-Cairo 11421 Egypt.
⁵ Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City Alexandria 21943 Egypt akashyout@srtacity.sci.eg.

Abstract

[This corrects the article DOI: 10.1039/D3RA00805C.].