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Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing.
Micromachines (Basel). 2023 Feb 17;14(2):467. doi: 10.3390/mi14020467.
Micromachines (Basel). 2023.
PMID: 36838167
Free PMC article.
Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method.
Yue W, Li P, Zhou X, Wang Y, Wu J, Bai J.
Yue W, et al.
Nanomaterials (Basel). 2021 Aug 5;11(8):2009. doi: 10.3390/nano11082009.
Nanomaterials (Basel). 2021.
PMID: 34443840
Free PMC article.
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Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates.
Wu J, Li P, Xu S, Zhou X, Tao H, Yue W, Wang Y, Wu J, Zhang Y, Hao Y.
Wu J, et al.
Materials (Basel). 2020 Nov 13;13(22):5118. doi: 10.3390/ma13225118.
Materials (Basel). 2020.
PMID: 33202801
Free PMC article.
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Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes.
Wang Y, Li P, Zhang X, Xu S, Zhou X, Wu J, Yue W, Hao Y.
Wang Y, et al.
Materials (Basel). 2020 Jan 17;13(2):454. doi: 10.3390/ma13020454.
Materials (Basel). 2020.
PMID: 31963566
Free PMC article.
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