Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing

Wenkai Yue; Ruixuan Liu; Peixian Li; Xiaowei Zhou; Yang Liu; Bo Yang; Yingxiao Liu; Xiaowei Wang

doi:10.3390/mi14020467

Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing

Micromachines (Basel). 2023 Feb 17;14(2):467. doi: 10.3390/mi14020467.

Authors

Wenkai Yue^{1

2}, Ruixuan Liu³, Peixian Li^{1

4}, Xiaowei Zhou^{1

4}, Yang Liu¹, Bo Yang¹, Yingxiao Liu², Xiaowei Wang²

Affiliations

¹ School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
² Shenzhen Zhenhua Microelectronics Co., Ltd., Shenzhen 518000, China.
³ School of Economics and Management, Xidian University, Xi'an 710071, China.
⁴ State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.

Abstract

In this paper, the X-ray diffraction full width at half the maximum (XRD FWHM) of a 3.5 µm-thick hydride vapor phase epitaxy-aluminum nitride (HVPE-AlN) (002) face after high-temperature annealing was reduced to 129 arcsec. The tensile strain in the HVPE-AlN samples gradually released with the increasing annealing temperature. When the annealing temperature exceeded 1700 °C, an aluminum oxynitride (AlON) region was generated at the contact interface between HVPE-AlN and sapphire, and the AlON structure was observed to conform to the characteristics of Al5O6N by high-resolution transmission electron microscopy (HRTEM). A 265 nm light-emitting diode (LED) based on an HVPE-AlN template annealed at 1700 °C achieved a light output power (LOP) of 4.48 mW at 50 mA, which was approximately 57% greater than that of the original sample.

Keywords: DUV-LED; aluminum nitride; flip-chip; high-temperature annealing; hydride vapor phase epitaxy.

Abstract

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