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2020 | 5 |
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xiaogan yin
(19 results)?
Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric Acids.
ACS Appl Mater Interfaces. 2020 Oct 21;12(42):48170-48178. doi: 10.1021/acsami.0c14018. Epub 2020 Oct 9.
ACS Appl Mater Interfaces. 2020.
PMID: 32970945
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Cao Z, Yang T, Li J, Yin H, Zhu H, Luo J, Wang W, Radamson HH.
Li J, et al. Among authors: yin x.
Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793.
Nanomaterials (Basel). 2020.
PMID: 32326106
Free PMC article.
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First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.
Li C, Zhu H, Zhang Y, Wang Q, Yin X, Li J, Wang G, Kong Z, Ai X, Xie L, Liu Y, Li Y, Huang W, Yan Z, Xiao Z, Radamson HH, Li J, Wang W.
Li C, et al. Among authors: yin x.
Nano Lett. 2021 Jun 9;21(11):4730-4737. doi: 10.1021/acs.nanolett.1c01033. Epub 2021 May 26.
Nano Lett. 2021.
PMID: 34038143
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A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH.
Li J, et al. Among authors: yin x.
Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771.
Materials (Basel). 2020.
PMID: 32046197
Free PMC article.
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Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium.
Xie L, Zhu H, Zhang Y, Ai X, Wang G, Li J, Du A, Kong Z, Yin X, Li C, Zhao L, Li Y, Jia K, Li B, Radamson HH.
Xie L, et al. Among authors: yin x.
Nanomaterials (Basel). 2020 Aug 29;10(9):1715. doi: 10.3390/nano10091715.
Nanomaterials (Basel). 2020.
PMID: 32872556
Free PMC article.
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Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.
Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Liu J, Du A, Yang H, Yin X, Huang W, Li C, Li Y, Wang Q, Lu S, Kong Z, Xiang J, Du Y, Luo J, Li J, Radamson HH, Wang W, Ye T.
Xie L, et al. Among authors: yin x.
ACS Nano. 2023 Nov 28;17(22):22259-22267. doi: 10.1021/acsnano.3c02518. Epub 2023 Oct 12.
ACS Nano. 2023.
PMID: 37823534
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Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon-Germanium Multilayers Structures for Vertical Transistors Application.
Li C, Lin H, Li J, Yin X, Zhang Y, Kong Z, Wang G, Zhu H, Radamson HH.
Li C, et al. Among authors: yin x.
Nanoscale Res Lett. 2020 Dec 9;15(1):225. doi: 10.1186/s11671-020-03456-0.
Nanoscale Res Lett. 2020.
PMID: 33296038
Free PMC article.
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