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Negative Magnetoresistivity in Highly Doped n-Type GaN.
Materials (Basel). 2022 Oct 11;15(20):7069. doi: 10.3390/ma15207069.
Materials (Basel). 2022.
PMID: 36295135
Free PMC article.
Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium.
Schiavon D, Litwin-Staszewska E, Jakieła R, Grzanka S, Perlin P.
Schiavon D, et al. Among authors: litwin staszewska e.
Materials (Basel). 2021 Jan 13;14(2):354. doi: 10.3390/ma14020354.
Materials (Basel). 2021.
PMID: 33450822
Free PMC article.
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Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN.
Zajac M, Kaminski P, Kozlowski R, Litwin-Staszewska E, Piotrzkowski R, Grabianska K, Kucharski R, Jakiela R.
Zajac M, et al. Among authors: litwin staszewska e.
Materials (Basel). 2024 Mar 1;17(5):1160. doi: 10.3390/ma17051160.
Materials (Basel). 2024.
PMID: 38473631
Free PMC article.
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