Geelhaar L - Search Results

1

Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy.

Ruiz MG, Castro A, Herranz J, da Silva A, John P, Trampert A, Brandt O, Geelhaar L, Lähnemann J. Ruiz MG, et al. Among authors: geelhaar l. Nanotechnology. 2024 Apr 9;35(26). doi: 10.1088/1361-6528/ad375b. Nanotechnology. 2024. PMID: 38527360

2

Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor.

Puttisong Y, Wang XJ, Buyanova IA, Geelhaar L, Riechert H, Ptak AJ, Tu CW, Chen WM. Puttisong Y, et al. Among authors: geelhaar l. Nat Commun. 2013;4:1751. doi: 10.1038/ncomms2776. Nat Commun. 2013. PMID: 23612292 Free article.

3

Silicon-nanowire transistors with intruded nickel-silicide contacts.

Weber WM, Geelhaar L, Graham AP, Unger E, Duesberg GS, Liebau M, Pamler W, Chèze C, Riechert H, Lugli P, Kreupl F. Weber WM, et al. Among authors: geelhaar l. Nano Lett. 2006 Dec;6(12):2660-6. doi: 10.1021/nl0613858. Nano Lett. 2006. PMID: 17163684

4

Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors.

Martin D, Heinzig A, Grube M, Geelhaar L, Mikolajick T, Riechert H, Weber WM. Martin D, et al. Among authors: geelhaar l. Phys Rev Lett. 2011 Nov 18;107(21):216807. doi: 10.1103/PhysRevLett.107.216807. Epub 2011 Nov 18. Phys Rev Lett. 2011. PMID: 22181912

5

Room-temperature electron spin amplifier based on Ga(In)NAs alloys.

Puttisong Y, Buyanova IA, Ptak AJ, Tu CW, Geelhaar L, Riechert H, Chen WM. Puttisong Y, et al. Among authors: geelhaar l. Adv Mater. 2013 Feb 6;25(5):738-42. doi: 10.1002/adma.201202597. Epub 2012 Oct 26. Adv Mater. 2013. PMID: 23108727

6

Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires.

Chèze C, Geelhaar L, Trampert A, Brandt O, Riechert H. Chèze C, et al. Among authors: geelhaar l. Nano Lett. 2010 Sep 8;10(9):3426-31. doi: 10.1021/nl101465b. Nano Lett. 2010. PMID: 20715843

7

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

Breuer S, Pfüller C, Flissikowski T, Brandt O, Grahn HT, Geelhaar L, Riechert H. Breuer S, et al. Among authors: geelhaar l. Nano Lett. 2011 Mar 9;11(3):1276-9. doi: 10.1021/nl104316t. Epub 2011 Feb 14. Nano Lett. 2011. PMID: 21319838

8

Acoustically driven photon antibunching in nanowires.

Hernández-Mínguez A, Möller M, Breuer S, Pfüller C, Somaschini C, Lazić S, Brandt O, García-Cristóbal A, de Lima MM Jr, Cantarero A, Geelhaar L, Riechert H, Santos PV. Hernández-Mínguez A, et al. Among authors: geelhaar l. Nano Lett. 2012 Jan 11;12(1):252-8. doi: 10.1021/nl203461m. Epub 2011 Dec 13. Nano Lett. 2012. PMID: 22142481

9

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111).

Biermanns A, Breuer S, Trampert A, Davydok A, Geelhaar L, Pietsch U. Biermanns A, et al. Among authors: geelhaar l. Nanotechnology. 2012 Aug 3;23(30):305703. doi: 10.1088/0957-4484/23/30/305703. Epub 2012 Jul 2. Nanotechnology. 2012. PMID: 22751267

10

Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures.

Wölz M, Lähnemann J, Brandt O, Kaganer VM, Ramsteiner M, Pfüller C, Hauswald C, Huang CN, Geelhaar L, Riechert H. Wölz M, et al. Among authors: geelhaar l. Nanotechnology. 2012 Nov 16;23(45):455203. doi: 10.1088/0957-4484/23/45/455203. Epub 2012 Oct 19. Nanotechnology. 2012. PMID: 23085638

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