Room-temperature electron spin amplifier based on Ga(In)NAs alloys

Adv Mater. 2013 Feb 6;25(5):738-42. doi: 10.1002/adma.201202597. Epub 2012 Oct 26.

Abstract

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Alloys / chemistry
  • Amplifiers, Electronic*
  • Arsenicals / chemistry*
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / chemistry*
  • Indium / chemistry*
  • Materials Testing
  • Semiconductors*
  • Spin Labels
  • Temperature

Substances

  • Alloys
  • Arsenicals
  • Spin Labels
  • Indium
  • gallium arsenide
  • Gallium
  • indium arsenide