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Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density.
Materials (Basel). 2019 Oct 2;12(19):3236. doi: 10.3390/ma12193236.
Materials (Basel). 2019.
PMID: 31581707
Free PMC article.
Memristive characteristic of an amorphous Ga-Sn-O thin-film device.
Sugisaki S, Matsuda T, Uenuma M, Nabatame T, Nakashima Y, Imai T, Magari Y, Koretomo D, Furuta M, Kimura M.
Sugisaki S, et al. Among authors: koretomo d.
Sci Rep. 2019 Feb 26;9(1):2757. doi: 10.1038/s41598-019-39549-9.
Sci Rep. 2019.
PMID: 30808898
Free PMC article.
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Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors.
Koretomo D, Hamada S, Magari Y, Furuta M.
Koretomo D, et al.
Materials (Basel). 2020 Apr 20;13(8):1935. doi: 10.3390/ma13081935.
Materials (Basel). 2020.
PMID: 32325945
Free PMC article.
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Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes.
Magari Y, Aman SGM, Koretomo D, Masuda K, Shimpo K, Makino H, Kimura M, Furuta M.
Magari Y, et al. Among authors: koretomo d.
ACS Appl Mater Interfaces. 2020 Oct 21;12(42):47739-47746. doi: 10.1021/acsami.0c12638. Epub 2020 Oct 13.
ACS Appl Mater Interfaces. 2020.
PMID: 33047607
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