Memristive characteristic of an amorphous Ga-Sn-O thin-film device

Sumio Sugisaki; Tokiyoshi Matsuda; Mutsunori Uenuma; Toshihide Nabatame; Yasuhiko Nakashima; Takahito Imai; Yusaku Magari; Daichi Koretomo; Mamoru Furuta; Mutsumi Kimura

doi:10.1038/s41598-019-39549-9

Memristive characteristic of an amorphous Ga-Sn-O thin-film device

Sci Rep. 2019 Feb 26;9(1):2757. doi: 10.1038/s41598-019-39549-9.

Authors

Affiliations

¹ Department of Electronics and Informatics, Ryukoku University, Seta, Otsu, 520-2194, Japan.
² Innovative Materials and Processing Research Center, High-Tech Research Center, Seta, Otsu, 520-2194, Japan.
³ Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama, Ikoma, 630-0192, Japan.
⁴ MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science, Namiki, Tsukuba, 305-0044, Japan.
⁵ Graduate School of Information Science, Nara Institute of Science and Technology, Takayama, Ikoma, 630-0192, Japan.
⁶ Department of Material Chemistry, Ryukoku University, Seta, Otsu, 520-2194, Japan.
⁷ Institute for Nanotechnology, Kochi University of Technology, Tosayamada, Kami, 782-8502, Japan.
⁸ Department of Electronics and Informatics, Ryukoku University, Seta, Otsu, 520-2194, Japan. mutsu@rins.ryukoku.ac.jp.
⁹ Innovative Materials and Processing Research Center, High-Tech Research Center, Seta, Otsu, 520-2194, Japan. mutsu@rins.ryukoku.ac.jp.
¹⁰ Graduate School of Information Science, Nara Institute of Science and Technology, Takayama, Ikoma, 630-0192, Japan. mutsu@rins.ryukoku.ac.jp.

Abstract

We have found a memristive characteristic of an α-GTO thin-film device. The α-GTO thin-film layer is deposited using radio-frequency (RF) magnetron sputtering at room temperature and sandwiched between the Al top and bottom electrodes. It is found that the hysteresis loop of the flowing current (I) and applied voltage (V) characteristic becomes larger and stable after the one hundredth cycle. The electrical resistances for the high-resistance state (HRS) and low-resistance state (LRS) are clearly different and relatively stable. Based on various analysis, it is suggested that the memristive characteristic is due to the chemical reaction between the SnO₂ and SnO blocked by AlO_x on the Al bottom electrode. It is marvelous that the memristive characteristic can be realized by such common materials, simple structures, and easy fabrication.