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Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance.
Nanomaterials (Basel). 2022 Jan 28;12(3):462. doi: 10.3390/nano12030462.
Nanomaterials (Basel). 2022.
PMID: 35159807
Free PMC article.
Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison.
Tamersit K, Madan J, Kouzou A, Pandey R, Kennel R, Abdelrahem M.
Tamersit K, et al.
Nanomaterials (Basel). 2022 May 11;12(10):1639. doi: 10.3390/nano12101639.
Nanomaterials (Basel). 2022.
PMID: 35630861
Free PMC article.
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Leveraging negative capacitance ferroelectric materials for performance boosting of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation study.
Tamersit K, Moaiyeri MH, Jooq MKQ.
Tamersit K, et al.
Nanotechnology. 2022 Aug 30;33(46). doi: 10.1088/1361-6528/ac8883.
Nanotechnology. 2022.
PMID: 35947928
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Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection.
Tamersit K, Kouzou A, Rodriguez J, Abdelrahem M.
Tamersit K, et al.
Nanomaterials (Basel). 2024 Jan 19;14(2):220. doi: 10.3390/nano14020220.
Nanomaterials (Basel). 2024.
PMID: 38276738
Free PMC article.
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