Leveraging negative capacitance ferroelectric materials for performance boosting of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation study

Khalil Tamersit; Mohammad Hossein Moaiyeri; Mohammad Khaleqi Qaleh Jooq

doi:10.1088/1361-6528/ac8883

Leveraging negative capacitance ferroelectric materials for performance boosting of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation study

Nanotechnology. 2022 Aug 30;33(46). doi: 10.1088/1361-6528/ac8883.

Authors

Khalil Tamersit^{1

2

3}, Mohammad Hossein Moaiyeri^{4

5}, Mohammad Khaleqi Qaleh Jooq⁴

Affiliations

¹ Department of Electronics and Telecommunications, Université 8 Mai 1945 Guelma, Guelma 24000, Algeria.
² Department of Electrical and Automatic Engineering, Université 8 Mai 1945 Guelma, Guelma 24000, Algeria.
³ Laboratory of Inverse Problems, Modeling, Information and Systems (PIMIS), Université 8 Mai 1945 Guelma, Guelma 24000, Algeria.
⁴ Nanotechnology and Quantum Computing Lab of the Shahid Beheshti University, Tehran, Iran.
⁵ Faculty of Electrical Engineering, Shahid Beheshti University, Tehran, Iran.

PMID: 35947928
DOI: 10.1088/1361-6528/ac8883

Abstract

In this paper, an ultrascaled ballistic graphene nanoribbon field-effect transistor (GNRFET) endowed with a compound double-gate based on metal-ferroelectric-metal (MFM) structure is proposed to overcome the limitations encountered with its conventional counterpart. The ballistic transistor is computationally investigated by solving self-consistently the non-equilibrium Green's function formalism and the Poisson solver in conjunction with the Landau-Khalatnikov equation. The numerical investigation has included the ferroelectric-induced amplified internal metal voltage, the role of the ferroelectric thickness in boosting the device performance, the assessment of the switching and subthreshold performance, and the analysis of the FE-GNRFET scaling capability. The simulations revealed that the MFM-based gate can significantly boost the performance of GNRFETs, including the switching behavior, the on-current, the off-current, the current ratio, the swing factor, the intrinsic delay, and the scaling capability. More importantly, the proposed MFM GNRFET was found able to provide sub-thermionic subthreshold swing even with sub-10 nm gate lengths, which is very promising for low-power applications. The obtained results indicate that the MFM-based gating approach can give new impulses to the GNRFET technology.

Keywords: field-effect transistors (FETs); graphene nanoribbon (GNR); metal-ferroelectric-metal-insulator-semiconductor (MFMIS); negative capacitance (NC); quantum simulation; subthreshold swing (SS); switching.