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In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min.
ACS Appl Mater Interfaces. 2019 Aug 21;11(33):30493-30499. doi: 10.1021/acsami.9b10360. Epub 2019 Aug 12.
ACS Appl Mater Interfaces. 2019.
PMID: 31361110
Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.
Köhler M, Pomaska M, Lentz F, Finger F, Rau U, Ding K.
Köhler M, et al. Among authors: pomaska m.
ACS Appl Mater Interfaces. 2018 May 2;10(17):14259-14263. doi: 10.1021/acsami.8b02002. Epub 2018 Apr 23.
ACS Appl Mater Interfaces. 2018.
PMID: 29664611
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Development of Conductive SiCx:H as a New Hydrogenation Technique for Tunnel Oxide Passivating Contacts.
Qiu K, Pomaska M, Li S, Lambertz A, Duan W, Gad A, Geitner M, Brugger J, Liang Z, Shen H, Finger F, Rau U, Ding K.
Qiu K, et al. Among authors: pomaska m.
ACS Appl Mater Interfaces. 2020 Jul 1;12(26):29986-29992. doi: 10.1021/acsami.0c06637. Epub 2020 Jun 17.
ACS Appl Mater Interfaces. 2020.
PMID: 32501671
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Phosphorus Catalytic Doping on Intrinsic Silicon Thin Films for the Application in Silicon Heterojunction Solar Cells.
Liu Y, Pomaska M, Duan W, Qiu D, Li S, Lambertz A, Gad A, Breuer U, Finger F, Rau U, Ding K.
Liu Y, et al. Among authors: pomaska m.
ACS Appl Mater Interfaces. 2020 Dec 16;12(50):56615-56621. doi: 10.1021/acsami.0c17416. Epub 2020 Dec 2.
ACS Appl Mater Interfaces. 2020.
PMID: 33263985
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