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Inert ambient annealing effect on MANOS capacitor memory characteristics.
Nanotechnology. 2015 Mar 27;26(13):134004. doi: 10.1088/0957-4484/26/13/134004. Epub 2015 Mar 12.
Nanotechnology. 2015.
PMID: 25764569
In situ quadrupole mass spectrometry study of atomic-layer deposition of ZrO2 using Cp2Zr(CH3)2 and water.
Niinistö J, Rahtu A, Putkonen M, Ritala M, Leskelä M, Niinistö L.
Niinistö J, et al.
Langmuir. 2005 Aug 2;21(16):7321-5. doi: 10.1021/la0500732.
Langmuir. 2005.
PMID: 16042461
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Atomic layer deposition, characterization, and growth mechanistic studies of TiO2 thin films.
Kaipio M, Blanquart T, Tomczak Y, Niinistö J, Gavagnin M, Longo V, Wanzenböck HD, Pallem VR, Dussarrat C, Puukilainen E, Ritala M, Leskelä M.
Kaipio M, et al. Among authors: niinisto j.
Langmuir. 2014 Jul 1;30(25):7395-404. doi: 10.1021/la500893u. Epub 2014 Jun 18.
Langmuir. 2014.
PMID: 24896967
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Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars.
Caldwell JD, Glembocki OJ, Bezares FJ, Kariniemi MI, Niinistö JT, Hatanpää TT, Rendell RW, Ukaegbu M, Ritala MK, Prokes SM, Hosten CM, Leskelä MA, Kasica R.
Caldwell JD, et al. Among authors: niinisto jt.
Opt Express. 2011 Dec 19;19(27):26056-64. doi: 10.1364/OE.19.026056.
Opt Express. 2011.
PMID: 22274194
Free article.
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In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).
Rose M, Niinistö J, Endler I, Bartha JW, Kücher P, Ritala M.
Rose M, et al. Among authors: niinisto j.
ACS Appl Mater Interfaces. 2010 Feb;2(2):347-50. doi: 10.1021/am900807a.
ACS Appl Mater Interfaces. 2010.
PMID: 20356179
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[Duodecim ambulances in the East Karelian war in 1921-2].
Niinistö J.
Niinistö J.
Duodecim. 2001;117(21):2153-9.
Duodecim. 2001.
PMID: 12184200
Finnish.
No abstract available.
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