Muziol G - Search Results

1

Polarization Doping in a GaN-InN System-Ab Initio Simulation.

Ahmad A, Strak P, Kempisty P, Sakowski K, Piechota J, Kangawa Y, Grzegory I, Leszczynski M, Zytkiewicz ZR, Muziol G, Monroy E, Kaminska A, Krukowski S. Ahmad A, et al. Among authors: muziol g. Materials (Basel). 2023 Jan 31;16(3):1227. doi: 10.3390/ma16031227. Materials (Basel). 2023. PMID: 36770233 Free PMC article.

2

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes.

Slawinska J, Muziol G, Siekacz M, Turski H, Hajdel M, Zak M, Feduniewicz-Zmuda A, Staszczak G, Skierbiszewski C. Slawinska J, et al. Among authors: muziol g. Opt Express. 2022 Jul 18;30(15):27004-27014. doi: 10.1364/OE.458950. Opt Express. 2022. PMID: 36236881 Free article.

3

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction.

Pieniak K, Chlipala M, Turski H, Trzeciakowski W, Muziol G, Staszczak G, Kafar A, Makarowa I, Grzanka E, Grzanka S, Skierbiszewski C, Suski T. Pieniak K, et al. Among authors: muziol g. Opt Express. 2021 Jan 18;29(2):1824-1837. doi: 10.1364/OE.415258. Opt Express. 2021. PMID: 33726388 Free article.

4

Anomalous photocurrent in wide InGaN quantum wells.

Bercha A, Trzeciakowski W, Muzioł G, Siekacz M, Skierbiszewski C. Bercha A, et al. Among authors: muziol g. Opt Express. 2020 Feb 17;28(4):4717-4725. doi: 10.1364/OE.382646. Opt Express. 2020. PMID: 32121704 Free article.

5

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs.

Hajdel M, Chlipała M, Siekacz M, Turski H, Wolny P, Nowakowski-Szkudlarek K, Feduniewicz-Żmuda A, Skierbiszewski C, Muziol G. Hajdel M, et al. Among authors: muziol g. Materials (Basel). 2021 Dec 29;15(1):237. doi: 10.3390/ma15010237. Materials (Basel). 2021. PMID: 35009382 Free PMC article.

6

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN.

Turski H, Wolny P, Chlipala M, Sawicka M, Reszka A, Kempisty P, Konczewicz L, Muziol G, Siekacz M, Skierbiszewski C. Turski H, et al. Among authors: muziol g. Materials (Basel). 2022 Aug 27;15(17):5929. doi: 10.3390/ma15175929. Materials (Basel). 2022. PMID: 36079311 Free PMC article.

7

Nanostars in Highly Si-Doped GaN.

Sawicka M, Turski H, Sobczak K, Feduniewicz-Żmuda A, Fiuczek N, Gołyga O, Siekacz M, Muziol G, Nowak G, Smalc-Koziorowska J, Skierbiszewski C. Sawicka M, et al. Among authors: muziol g. Cryst Growth Des. 2023 Jun 11;23(7):5093-5101. doi: 10.1021/acs.cgd.3c00317. eCollection 2023 Jul 5. Cryst Growth Des. 2023. PMID: 37426547 Free PMC article.

8

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching.

Sawicka M, Fiuczek N, Turski H, Muziol G, Siekacz M, Nowakowski-Szkudlarek K, Feduniewicz-Żmuda A, Wolny P, Skierbiszewski C. Sawicka M, et al. Among authors: muziol g. Nanoscale. 2020 Mar 12;12(10):6137-6143. doi: 10.1039/c9nr10968d. Nanoscale. 2020. PMID: 32129781

9

Bidirectional light-emitting diode as a visible light source driven by alternating current.

Żak M, Muziol G, Siekacz M, Bercha A, Hajdel M, Nowakowski-Szkudlarek K, Lachowski A, Chlipała M, Wolny P, Turski H, Skierbiszewski C. Żak M, et al. Among authors: muziol g. Nat Commun. 2023 Nov 20;14(1):7562. doi: 10.1038/s41467-023-43335-7. Nat Commun. 2023. PMID: 37985775 Free PMC article.

10

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface.

Smalc-Koziorowska J, Moneta J, Muzioł G, Chromiński W, Kernke R, Albrecht M, Schulz T, Belabbas I. Smalc-Koziorowska J, et al. Among authors: muziol g. J Microsc. 2024 Mar;293(3):146-152. doi: 10.1111/jmi.13234. Epub 2023 Oct 17. J Microsc. 2024. PMID: 37846455

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