Nanostars in Highly Si-Doped GaN

Abstract

Understanding the relation between surface morphology during epitaxy of GaN:Si and its electrical properties is important from both the fundamental and application perspectives. This work evidences the formation of nanostars in highly doped GaN:Si layers with doping level ranging from 5 × 10¹⁹ to 1 × 10²⁰ cm^-3 grown by plasma-assisted molecular beam epitaxy (PAMBE). Nanostars are 50-nm-wide platelets arranged in six-fold symmetry around the [0001] axis and have different electrical properties from the surrounding layer. Nanostars are formed in highly doped GaN:Si layers due to the enhanced growth rate along the a-direction ⟨112̅0⟩. Then, the hexagonal-shaped growth spirals, typically observed in GaN grown on GaN/sapphire templates, develop distinct arms that extend in the a-direction ⟨112̅0⟩. The nanostar surface morphology is reflected in the inhomogeneity of electrical properties at the nanoscale as evidenced in this work. Complementary techniques such as electrochemical etching (ECE), atomic force microscopy (AFM), and scanning spreading resistance microscopy (SSRM) are used to link the morphology and conductivity variations across the surface. Additionally, transmission electron microscopy (TEM) studies with high spatial resolution composition mapping by energy-dispersive X-ray spectroscopy (EDX) confirmed about 10% lower incorporation of Si in the hillock arms than in the layer. However, the lower Si content in the nanostars cannot solely be responsible for the fact that they are not etched in ECE. The compensation mechanism in the nanostars observed in GaN:Si is discussed to be an additional contribution to the local decrease in conductivity at the nanoscale.