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Nanostars in Highly Si-Doped GaN.
Cryst Growth Des. 2023 Jun 11;23(7):5093-5101. doi: 10.1021/acs.cgd.3c00317. eCollection 2023 Jul 5.
Cryst Growth Des. 2023.
PMID: 37426547
Free PMC article.
Electrically pumped blue laser diodes with nanoporous bottom cladding.
Sawicka M, Muziol G, Fiuczek N, Hajdel M, Siekacz M, Feduniewicz-Żmuda A, Nowakowski-Szkudlarek K, Wolny P, Żak M, Turski H, Skierbiszewski C.
Sawicka M, et al. Among authors: feduniewicz zmuda a.
Opt Express. 2022 Mar 28;30(7):10709-10722. doi: 10.1364/OE.454359.
Opt Express. 2022.
PMID: 35473031
Free article.
Item in Clipboard
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching.
Sawicka M, Fiuczek N, Turski H, Muziol G, Siekacz M, Nowakowski-Szkudlarek K, Feduniewicz-Żmuda A, Wolny P, Skierbiszewski C.
Sawicka M, et al. Among authors: feduniewicz zmuda a.
Nanoscale. 2020 Mar 12;12(10):6137-6143. doi: 10.1039/c9nr10968d.
Nanoscale. 2020.
PMID: 32129781
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Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs.
Hajdel M, Chlipała M, Siekacz M, Turski H, Wolny P, Nowakowski-Szkudlarek K, Feduniewicz-Żmuda A, Skierbiszewski C, Muziol G.
Hajdel M, et al. Among authors: feduniewicz zmuda a.
Materials (Basel). 2021 Dec 29;15(1):237. doi: 10.3390/ma15010237.
Materials (Basel). 2021.
PMID: 35009382
Free PMC article.
Item in Clipboard
Terahertz 3D printed diffractive lens matrices for field-effect transistor detector focal plane arrays.
Szkudlarek K, Sypek M, Cywiński G, Suszek J, Zagrajek P, Feduniewicz-Żmuda A, Yahniuk I, Yatsunenko S, Nowakowska-Siwińska A, Coquillat D, But DB, Rachoń M, Węgrzyńska K, Skierbiszewski C, Knap W.
Szkudlarek K, et al. Among authors: feduniewicz zmuda a.
Opt Express. 2016 Sep 5;24(18):20119-31. doi: 10.1364/OE.24.020119.
Opt Express. 2016.
PMID: 27607620
Free article.
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