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Page 1
Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors.
Nanotechnology. 2010 Jul 23;21(29):295707. doi: 10.1088/0957-4484/21/29/295707. Epub 2010 Jul 5.
Nanotechnology. 2010.
PMID: 20601767
Nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite layer and capping the HfO2/SiO2 composite blocking oxide layer.
Chiang KC, Hsieh TE.
Chiang KC, et al. Among authors: hsieh te.
Nanotechnology. 2012 Jun 8;23(22):225703. doi: 10.1088/0957-4484/23/22/225703. Epub 2012 May 10.
Nanotechnology. 2012.
PMID: 22571872
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Characteristics of AgInSbTe-SiO2 nanocomposite thin film applied to nonvolatile floating gate memory devices.
Chiang KC, Hsieh TE.
Chiang KC, et al. Among authors: hsieh te.
Nanotechnology. 2010 Oct 22;21(42):425204. doi: 10.1088/0957-4484/21/42/425204. Epub 2010 Sep 22.
Nanotechnology. 2010.
PMID: 20858935
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Using mixed solvent and changing spin-coating parameters to increase the efficiency and lifetime of organic solar cells.
Tsai YS, Chu WP, Tang RM, Juang FS, Chang MH, Liu MO, Hsieh TE.
Tsai YS, et al. Among authors: hsieh te.
J Nanosci Nanotechnol. 2008 Oct;8(10):5232-5.
J Nanosci Nanotechnol. 2008.
PMID: 19198428
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The conductive property of ZnO QDs-SiO2 and ZnO QDs-SiO(x)N(y) nanocomposite films.
Peng YY, Hsieh TE, Hsu CH.
Peng YY, et al. Among authors: hsieh te.
J Nanosci Nanotechnol. 2009 Aug;9(8):4892-900. doi: 10.1166/jnn.2009.1102.
J Nanosci Nanotechnol. 2009.
PMID: 19928166
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