Nanocomposite thin films containing AgInSbTe (AIST) particles embedded in an SiO(2) matrix was prepared by sputtering deposition and its feasibility for nonvolatile floating gate memory (NFGM) was investigated. The sample subjected to a 400 °C annealing exhibited a distinct hysteresis memory window (ΔV(FB)) shift = 6.6 V and charge density = 5.2 × 10(12) cm(-2) after ± 8 V gate voltage sweep. Electrical measurement revealed the current transport is via the Schottky emission in low applied field and the space-charge-limited conduction mechanism in high applied field in the samples, regardless of their thermal history. Transmission electron microscopy and x-ray photoelectron spectroscopy indicated that the metallic Sb(2)Te nanocrystals (NCs) with diameters about 5-7 nm dispersed in a nanocomposite layer may serve as the discrete charge-storage traps for nonvolatile memory. Analytical results illustrate the utilization of an AIST-SiO(2) nanocomposite layer as the core structure of NFGM devices is able to simplify the device structure and fabrication process.