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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.
Zaiter A, Nikitskiy N, Nemoz M, Vuong P, Ottapilakkal V, Sundaram S, Ougazzaden A, Brault J. Zaiter A, et al. Among authors: vuong p. Nanomaterials (Basel). 2023 Aug 24;13(17):2404. doi: 10.3390/nano13172404. Nanomaterials (Basel). 2023. PMID: 37686912 Free PMC article.
Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions.
Kang JH, Shin H, Kim KS, Song MK, Lee D, Meng Y, Choi C, Suh JM, Kim BJ, Kim H, Hoang AT, Park BI, Zhou G, Sundaram S, Vuong P, Shin J, Choe J, Xu Z, Younas R, Kim JS, Han S, Lee S, Kim SO, Kang B, Seo S, Ahn H, Seo S, Reidy K, Park E, Mun S, Park MC, Lee S, Kim HJ, Kum HS, Lin P, Hinkle C, Ougazzaden A, Ahn JH, Kim J, Bae SH. Kang JH, et al. Among authors: vuong p. Nat Mater. 2023 Dec;22(12):1470-1477. doi: 10.1038/s41563-023-01704-z. Epub 2023 Nov 27. Nat Mater. 2023. PMID: 38012388
High energy density in artificial heterostructures through relaxation time modulation.
Han S, Kim JS, Park E, Meng Y, Xu Z, Foucher AC, Jung GY, Roh I, Lee S, Kim SO, Moon JY, Kim SI, Bae S, Zhang X, Park BI, Seo S, Li Y, Shin H, Reidy K, Hoang AT, Sundaram S, Vuong P, Kim C, Zhao J, Hwang J, Wang C, Choi H, Kim DH, Kwon J, Park JH, Ougazzaden A, Lee JH, Ahn JH, Kim J, Mishra R, Kim HS, Ross FM, Bae SH. Han S, et al. Among authors: vuong p. Science. 2024 Apr 19;384(6693):312-317. doi: 10.1126/science.adl2835. Epub 2024 Apr 18. Science. 2024. PMID: 38669572
Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal-Semiconductor-Metal Neutron Detectors.
Mballo A, Ahaitouf A, Sundaram S, Srivastava A, Ottapilakkal V, Gujrati R, Vuong P, Karrakchou S, Kumar M, Li X, Halfaya Y, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Mballo A, et al. Among authors: vuong p. ACS Omega. 2021 Dec 28;7(1):804-809. doi: 10.1021/acsomega.1c05458. eCollection 2022 Jan 11. ACS Omega. 2021. PMID: 35036747 Free PMC article.
Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.
Vuong P, Sundaram S, Mballo A, Patriarche G, Leone S, Benkhelifa F, Karrakchou S, Moudakir T, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Vuong P, et al. ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55460-55466. doi: 10.1021/acsami.0c16850. Epub 2020 Nov 25. ACS Appl Mater Interfaces. 2020. PMID: 33237738
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
Karrakchou S, Sundaram S, Ayari T, Mballo A, Vuong P, Srivastava A, Gujrati R, Ahaitouf A, Patriarche G, Leichlé T, Gautier S, Moudakir T, Voss PL, Salvestrini JP, Ougazzaden A. Karrakchou S, et al. Among authors: vuong p. Sci Rep. 2020 Dec 10;10(1):21709. doi: 10.1038/s41598-020-77681-z. Sci Rep. 2020. PMID: 33303773 Free PMC article.