Morgan E. Ware - Search Results

Year	Number of Results
2012	2
2015	2
2016	5
2017	4
2018	3
2020	2
2021	1
2022	2
2023	1
2024	0

1

Band Offsets of the MOCVD-Grown β-(Al_0.21Ga_0.79)₂O₃/β-Ga₂O₃ (010) Heterojunction.

Morgan TA, Rudie J, Zamani-Alavijeh M, Kuchuk AV, Orishchin N, Alema F, Osinsky A, Sleezer R, Salamo G, Ware ME. Morgan TA, et al. Among authors: ware me. ACS Appl Mater Interfaces. 2022 Jul 18. doi: 10.1021/acsami.2c04177. Online ahead of print. ACS Appl Mater Interfaces. 2022. PMID: 35848769

2

Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111).

Jum'h I, Abu-Safe HH, Ware ME, Qattan IA, Telfah A, Tavares CJ. Jum'h I, et al. Among authors: ware me. Nanomaterials (Basel). 2023 Mar 8;13(6):970. doi: 10.3390/nano13060970. Nanomaterials (Basel). 2023. PMID: 36985864 Free PMC article.

3

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift.

Kuchuk AV, de Oliveira FM, Ghosh PK, Mazur YI, Stanchu HV, Teodoro MD, Ware ME, Salamo GJ. Kuchuk AV, et al. Among authors: ware me. Nano Res. 2022;15(3):2405-2412. doi: 10.1007/s12274-021-3855-4. Epub 2021 Sep 13. Nano Res. 2022. PMID: 34540143 Free PMC article.

4

Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation.

Hu X, Zhang Y, Guzun D, Ware ME, Mazur YI, Lienau C, Salamo GJ. Hu X, et al. Among authors: ware me. Sci Rep. 2020 Jul 2;10(1):10930. doi: 10.1038/s41598-020-67961-z. Sci Rep. 2020. PMID: 32616829 Free PMC article.

5

Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.

Wu J, Ramsay A, Sanchez A, Zhang Y, Kim D, Brossard F, Hu X, Benamara M, Ware ME, Mazur YI, Salamo GJ, Aagesen M, Wang Z, Liu H. Wu J, et al. Among authors: ware me. Nano Lett. 2016 Jan 13;16(1):504-11. doi: 10.1021/acs.nanolett.5b04142. Epub 2015 Dec 17. Nano Lett. 2016. PMID: 26666697

6

Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots.

Yuan Q, Liang B, Zhou C, Wang Y, Guo Y, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ. Yuan Q, et al. Among authors: ware me. Nanoscale Res Lett. 2018 Nov 29;13(1):387. doi: 10.1186/s11671-018-2792-y. Nanoscale Res Lett. 2018. PMID: 30498864 Free PMC article.

7

Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy.

Yuan Q, Liang B, Luo S, Wang Y, Yan Q, Wang S, Fu G, Mazur YI, Maidaniuk Y, Ware ME, Salamo GJ. Yuan Q, et al. Among authors: ware me. Nanotechnology. 2020 Jul 31;31(31):315701. doi: 10.1088/1361-6528/ab8a8e. Epub 2020 Apr 17. Nanotechnology. 2020. PMID: 32303015

8

Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots.

Liang B, Yuan Q, Su L, Wang Y, Guo Y, Wang S, Fu G, Marega E, Mazur YI, Ware ME, Salamo G. Liang B, et al. Among authors: ware me. Opt Express. 2018 Sep 3;26(18):23107-23118. doi: 10.1364/OE.26.023107. Opt Express. 2018. PMID: 30184966 Free article.

9

Comparative study of photoluminescence from In_0.3Ga_0.7As/GaAs surface and buried quantum dots.

Wang G, Liang B, Juang BC, Das A, Debnath MC, Huffaker DL, Mazur YI, Ware ME, Salamo GJ. Wang G, et al. Among authors: ware me. Nanotechnology. 2016 Nov 18;27(46):465701. doi: 10.1088/0957-4484/27/46/465701. Epub 2016 Oct 17. Nanotechnology. 2016. PMID: 27749272

10

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

Tsykaniuk BI, Nikolenko AS, Strelchuk VV, Naseka VM, Mazur YI, Ware ME, DeCuir EA Jr, Sadovyi B, Weyher JL, Jakiela R, Salamo GJ, Belyaev AE. Tsykaniuk BI, et al. Among authors: ware me. Nanoscale Res Lett. 2017 Dec;12(1):397. doi: 10.1186/s11671-017-2171-0. Epub 2017 Jun 8. Nanoscale Res Lett. 2017. PMID: 28599511 Free PMC article.

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