Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots

Guodong Wang; Baolai Liang; Bor-Chau Juang; Aparna Das; Mukul C Debnath; Diana L Huffaker; Yuriy I Mazur; Morgan E Ware; Gregory J Salamo

doi:10.1088/0957-4484/27/46/465701

Comparative study of photoluminescence from In_0.3Ga_0.7As/GaAs surface and buried quantum dots

Nanotechnology. 2016 Nov 18;27(46):465701. doi: 10.1088/0957-4484/27/46/465701. Epub 2016 Oct 17.

Authors

Guodong Wang¹, Baolai Liang, Bor-Chau Juang, Aparna Das, Mukul C Debnath, Diana L Huffaker, Yuriy I Mazur, Morgan E Ware, Gregory J Salamo

Affiliation

¹ California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, People's Republic of China.

PMID: 27749272
DOI: 10.1088/0957-4484/27/46/465701

Abstract

The optical properties of In_0.3Ga_0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.