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Page 1
Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors.
Micromachines (Basel). 2022 Sep 14;13(9):1519. doi: 10.3390/mi13091519.
Micromachines (Basel). 2022.
PMID: 36144142
Free PMC article.
Exploring possibilities of band gap measurement with off-axis EELS in TEM.
Korneychuk S, Partoens B, Guzzinati G, Ramaneti R, Derluyn J, Haenen K, Verbeeck J.
Korneychuk S, et al. Among authors: derluyn j.
Ultramicroscopy. 2018 Jun;189:76-84. doi: 10.1016/j.ultramic.2018.03.021. Epub 2018 Mar 29.
Ultramicroscopy. 2018.
PMID: 29626835
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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A, Borga M, Meneghini M, De Santi C, Benazzi D, Besendörfer S, Püsche R, Derluyn J, Degroote S, Germain M, Kabouche R, Abid I, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: derluyn j.
Micromachines (Basel). 2020 Jan 17;11(1):101. doi: 10.3390/mi11010101.
Micromachines (Basel). 2020.
PMID: 31963553
Free PMC article.
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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors.
Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T.
Besendörfer S, et al. Among authors: derluyn j.
Sci Rep. 2020 Oct 14;10(1):17252. doi: 10.1038/s41598-020-73977-2.
Sci Rep. 2020.
PMID: 33057086
Free PMC article.
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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: derluyn j.
Materials (Basel). 2020 Sep 25;13(19):4271. doi: 10.3390/ma13194271.
Materials (Basel). 2020.
PMID: 32992721
Free PMC article.
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