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Page 1
Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells.
Opt Express. 2023 May 8;31(10):15779-15790. doi: 10.1364/OE.486721.
Opt Express. 2023.
PMID: 37157671
Free article.
Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer.
Zheng DG, Min S, Kim J, Han DP.
Zheng DG, et al. Among authors: han dp.
Materials (Basel). 2023 Dec 28;17(1):167. doi: 10.3390/ma17010167.
Materials (Basel). 2023.
PMID: 38204021
Free PMC article.
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Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.
Han DP, Iwaya M, Takeuchi T, Kamiyama S.
Han DP, et al.
ACS Appl Mater Interfaces. 2022 Jun 8;14(22):26264-26270. doi: 10.1021/acsami.2c05585. Epub 2022 May 24.
ACS Appl Mater Interfaces. 2022.
PMID: 35609181
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Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation.
Yanai K, Lu W, Yamane Y, Han DP, Ou H, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I.
Yanai K, et al. Among authors: han dp.
Nanomaterials (Basel). 2020 Oct 21;10(10):2075. doi: 10.3390/nano10102075.
Nanomaterials (Basel). 2020.
PMID: 33096609
Free PMC article.
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Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires.
Lu W, Sone N, Goto N, Iida K, Suzuki A, Han DP, Iwaya M, Tekeuchi T, Kamiyama S, Akasaki I.
Lu W, et al. Among authors: han dp.
Nanoscale. 2019 Oct 28;11(40):18746-18757. doi: 10.1039/c9nr07271c. Epub 2019 Oct 8.
Nanoscale. 2019.
PMID: 31591631
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Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis.
Han DP, Lee GW, Min S, Shin DS, Shim JI, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I.
Han DP, et al.
Sci Rep. 2020 Oct 15;10(1):17433. doi: 10.1038/s41598-020-74585-w.
Sci Rep. 2020.
PMID: 33060771
Free PMC article.
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