This study aims to improve the emission efficiency of GaInN-based green light-emitting devices (LEDs) using the pre-trimethylindium (TMIn) flow treatment of a quantum well (QW) since we hypothesize that the pre-TMIn flow treatment is able to suppress the incorporation of surface defects (SDs) from the n-type GaN surface into the QWs. For this purpose, first, we investigate the effect of TMIn flow treatment on the SDs in n-type GaN samples by measuring time-resolved photoluminescence. The result of the investigation shows that the TMIn flow treatment effectively deactivated and/or neutralized the SDs from acting as the nonradiative recombination centers. Next, we prepare and investigate the GaInN-based green LEDs employing five pairs of multiple quantum wells (MQWs), in which the number of pre-TMIn treated QWs varies from zero to five. Through the analysis of prepared samples, we demonstrate that the pre-TMIn flow treatment of QWs works effectively in suppressing the SD incorporation into the MQWs, thereby improving the emission intensity.
Keywords: III-nitride; capacitance−voltage characteristics; metalorganic vapor phase epitaxy; pre-TMIn flow treatment; quantum wells; time-resolved photoluminescence.