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Page 1
Mg Doping of N-Polar, In-Rich InAlN.
Materials (Basel). 2023 Mar 10;16(6):2250. doi: 10.3390/ma16062250.
Materials (Basel). 2023.
PMID: 36984128
Free PMC article.
GaAs Nanomembranes in the High Electron Mobility Transistor Technology.
Gregušová D, Dobročka E, Eliáš P, Stoklas R, Blaho M, Pohorelec O, Haščík Š, Kučera M, Kúdela R.
Gregušová D, et al.
Materials (Basel). 2021 Jun 22;14(13):3461. doi: 10.3390/ma14133461.
Materials (Basel). 2021.
PMID: 34206408
Free PMC article.
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New approach to local anodic oxidation of semiconductor heterostructures.
Martaus J, Gregusová D, Cambel V, Kúdela R, Soltýs J.
Martaus J, et al. Among authors: gregusova d.
Ultramicroscopy. 2008 Sep;108(10):1086-9. doi: 10.1016/j.ultramic.2008.04.053. Epub 2008 May 10.
Ultramicroscopy. 2008.
PMID: 18555609
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Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices.
Cambel V, Martaus J, Soltýs J, Kúdela R, Gregusová D.
Cambel V, et al. Among authors: gregusova d.
Ultramicroscopy. 2008 Sep;108(10):1021-4. doi: 10.1016/j.ultramic.2008.04.032. Epub 2008 May 8.
Ultramicroscopy. 2008.
PMID: 18565663
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50-nm local anodic oxidation technology of semiconductor heterostructures.
Martaus J, Cambel V, Gregusová D, Kúdela R, Fedor J.
Martaus J, et al. Among authors: gregusova d.
J Nanosci Nanotechnol. 2010 Jul;10(7):4448-53. doi: 10.1166/jnn.2010.2362.
J Nanosci Nanotechnol. 2010.
PMID: 21128438
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