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Page 1
High-stability pH sensing with a few-layer MoS2 field-effect transistor.
Nanotechnology. 2019 Sep 13;30(37):375203. doi: 10.1088/1361-6528/ab277b. Epub 2019 Jun 6.
Nanotechnology. 2019.
PMID: 31170702
Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.
Zhao P, Azcatl A, Gomeniuk YY, Bolshakov P, Schmidt M, McDonnell SJ, Hinkle CL, Hurley PK, Wallace RM, Young CD.
Zhao P, et al. Among authors: young cd.
ACS Appl Mater Interfaces. 2017 Jul 19;9(28):24348-24356. doi: 10.1021/acsami.7b06204. Epub 2017 Jul 6.
ACS Appl Mater Interfaces. 2017.
PMID: 28650155
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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films.
Kim SJ, Mohan J, Kim HS, Hwang SM, Kim N, Jung YC, Sahota A, Kim K, Yu HY, Cha PR, Young CD, Choi R, Ahn J, Kim J.
Kim SJ, et al. Among authors: young cd.
Materials (Basel). 2020 Jul 2;13(13):2968. doi: 10.3390/ma13132968.
Materials (Basel). 2020.
PMID: 32630791
Free PMC article.
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Stress-Induced Crystallization of Thin Hf1- XZr XO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications.
Kim SJ, Mohan J, Lee JS, Kim HS, Lee J, Young CD, Colombo L, Summerfelt SR, San T, Kim J.
Kim SJ, et al. Among authors: young cd.
ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5208-5214. doi: 10.1021/acsami.8b17211. Epub 2019 Jan 28.
ACS Appl Mater Interfaces. 2019.
PMID: 30652846
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