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Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.
Kim YH, Jiang W, Lee D, Moon D, Choi HY, Shin JC, Jeong Y, Kim JC, Lee J, Huh W, Han CY, So JP, Kim TS, Kim SB, Koo HC, Wang G, Kang K, Park HG, Jeong HY, Im S, Lee GH, Low T, Lee CH. Kim YH, et al. Among authors: lee ch, lee d, lee j, lee gh. Adv Mater. 2024 Apr 22:e2314274. doi: 10.1002/adma.202314274. Online ahead of print. Adv Mater. 2024. PMID: 38647521
Spatially resolved photodetection in leaky ferroelectric BiFeO(3).
Lee WM, Sung JH, Chu K, Moya X, Lee D, Kim CJ, Mathur ND, Cheong SW, Yang CH, Jo MH. Lee WM, et al. Among authors: lee d. Adv Mater. 2012 Mar 8;24(10):OP49-53. doi: 10.1002/adma.201102816. Epub 2012 Jan 27. Adv Mater. 2012. PMID: 22282134
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