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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.
Micromachines (Basel). 2019 Oct 12;10(10):690. doi: 10.3390/mi10100690.
Micromachines (Basel). 2019.
PMID: 31614745
Free PMC article.
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A, Borga M, Meneghini M, De Santi C, Benazzi D, Besendörfer S, Püsche R, Derluyn J, Degroote S, Germain M, Kabouche R, Abid I, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: medjdoub f.
Micromachines (Basel). 2020 Jan 17;11(1):101. doi: 10.3390/mi11010101.
Micromachines (Basel). 2020.
PMID: 31963553
Free PMC article.
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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E, Zanoni E, Medjdoub F, Meneghesso G.
Tajalli A, et al. Among authors: medjdoub f.
Materials (Basel). 2020 Sep 25;13(19):4271. doi: 10.3390/ma13194271.
Materials (Basel). 2020.
PMID: 32992721
Free PMC article.
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Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications.
Medjdoub F.
Medjdoub F.
Micromachines (Basel). 2021 Jan 15;12(1):83. doi: 10.3390/mi12010083.
Micromachines (Basel). 2021.
PMID: 33467567
Free PMC article.
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Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors.
Abid I, Hamdaoui Y, Mehta J, Derluyn J, Medjdoub F.
Abid I, et al. Among authors: medjdoub f.
Micromachines (Basel). 2022 Sep 14;13(9):1519. doi: 10.3390/mi13091519.
Micromachines (Basel). 2022.
PMID: 36144142
Free PMC article.
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Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier.
Harrouche K, Venkatachalam S, Ben-Hammou L, Grandpierron F, Okada E, Medjdoub F.
Harrouche K, et al. Among authors: medjdoub f.
Micromachines (Basel). 2023 Jan 22;14(2):291. doi: 10.3390/mi14020291.
Micromachines (Basel). 2023.
PMID: 36837991
Free PMC article.
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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors.
Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T.
Besendörfer S, et al. Among authors: medjdoub f.
Sci Rep. 2020 Oct 14;10(1):17252. doi: 10.1038/s41598-020-73977-2.
Sci Rep. 2020.
PMID: 33057086
Free PMC article.
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GaN-Based Laser Wireless Power Transfer System.
De Santi C, Meneghini M, Caria A, Dogmus E, Zegaoui M, Medjdoub F, Kalinic B, Cesca T, Meneghesso G, Zanoni E.
De Santi C, et al. Among authors: medjdoub f.
Materials (Basel). 2018 Jan 17;11(1):153. doi: 10.3390/ma11010153.
Materials (Basel). 2018.
PMID: 29342114
Free PMC article.
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