Bao L - Search Results

1

Reversible Modification of Nitrogen-Doped Graphene Based on Se-N Dynamic Covalent Bonds for Field-Effect Transistors.

Zheng N, Feng Y, Zhang Y, Li R, Bian C, Bao L, Du S, Dong H, Shen Y, Feng W. Zheng N, et al. Among authors: bao l. ACS Appl Mater Interfaces. 2019 Jul 10;11(27):24360-24366. doi: 10.1021/acsami.9b02989. Epub 2019 Jun 26. ACS Appl Mater Interfaces. 2019. PMID: 31198022

2

Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene.

Ma R, Huan Q, Wu L, Yan J, Guo W, Zhang YY, Wang S, Bao L, Liu Y, Du S, Pantelides ST, Gao HJ. Ma R, et al. Among authors: bao l. Nano Lett. 2017 Sep 13;17(9):5291-5296. doi: 10.1021/acs.nanolett.7b01624. Epub 2017 Aug 14. Nano Lett. 2017. PMID: 28786680

3

Stable Silicene in Graphene/Silicene Van der Waals Heterostructures.

Li G, Zhang L, Xu W, Pan J, Song S, Zhang Y, Zhou H, Wang Y, Bao L, Zhang YY, Du S, Ouyang M, Pantelides ST, Gao HJ. Li G, et al. Among authors: bao l. Adv Mater. 2018 Dec;30(49):e1804650. doi: 10.1002/adma.201804650. Epub 2018 Oct 8. Adv Mater. 2018. PMID: 30368921

4

Quasi-2D Transport and Weak Antilocalization Effect in Few-layered VSe₂.

Liu H, Bao L, Zhou Z, Che B, Zhang R, Bian C, Ma R, Wu L, Yang H, Li J, Gu C, Shen CM, Du S, Gao HJ. Liu H, et al. Among authors: bao l. Nano Lett. 2019 Jul 10;19(7):4551-4559. doi: 10.1021/acs.nanolett.9b01412. Epub 2019 Jun 26. Nano Lett. 2019. PMID: 31241975

5

Transition-Metal Substitution-Induced Lattice Strain and Electrical Polarity Reversal in Monolayer WS₂.

Zhang P, Cheng N, Li M, Zhou B, Bian C, Wei Y, Wang X, Jiang H, Bao L, Lin Y, Hu Z, Du Y, Gong Y. Zhang P, et al. Among authors: bao l. ACS Appl Mater Interfaces. 2020 Apr 22;12(16):18650-18659. doi: 10.1021/acsami.9b22004. Epub 2020 Apr 13. ACS Appl Mater Interfaces. 2020. PMID: 32237720

6

Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices.

Wu L, Wang A, Shi J, Yan J, Zhou Z, Bian C, Ma J, Ma R, Liu H, Chen J, Huang Y, Zhou W, Bao L, Ouyang M, Pennycook SJ, Pantelides ST, Gao HJ. Wu L, et al. Among authors: bao l. Nat Nanotechnol. 2021 Aug;16(8):882-887. doi: 10.1038/s41565-021-00904-5. Epub 2021 May 3. Nat Nanotechnol. 2021. PMID: 33941919

7

Collective Magnetic Behavior in Vanadium Telluride Induced by Self-Intercalation.

Guzman R, Ning S, Zhang R, Liu H, Ma Y, Zhang YY, Bao L, Yang H, Du S, Bosman M, Pennycook SJ, Gao HJ, Zhou W. Guzman R, et al. Among authors: bao l. ACS Nano. 2023 Feb 14;17(3):2450-2459. doi: 10.1021/acsnano.2c09762. Epub 2023 Jan 30. ACS Nano. 2023. PMID: 36716185

8

Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices.

Wang G, Bao L, Pei T, Ma R, Zhang YY, Sun L, Zhang G, Yang H, Li J, Gu C, Du S, Pantelides ST, Schrimpf RD, Gao HJ. Wang G, et al. Among authors: bao l. Nano Lett. 2016 Nov 9;16(11):6870-6878. doi: 10.1021/acs.nanolett.6b02704. Epub 2016 Oct 31. Nano Lett. 2016. PMID: 27786486

9

Charge-Transfer-Induced Photoluminescence Properties of WSe₂ Monolayer-Bilayer Homojunction.

Jia Z, Shi J, Shang Q, Du W, Shan X, Ge B, Li J, Sui X, Zhong Y, Wang Q, Bao L, Zhang Q, Liu X. Jia Z, et al. Among authors: bao l. ACS Appl Mater Interfaces. 2019 Jun 5;11(22):20566-20573. doi: 10.1021/acsami.9b06017. Epub 2019 May 24. ACS Appl Mater Interfaces. 2019. PMID: 31082257

10

Tin diselenide van der Waals materials as new candidates for mid-infrared waveguide chips.

Xue M , Zheng Q , Chen R , Bao L , Du S , Chen J . Xue M , et al. Among authors: bao l. Nanoscale. 2019 Aug 1;11(30):14113-14117. doi: 10.1039/c9nr04264d. Nanoscale. 2019. PMID: 31334738

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