With strong spin-orbit coupling (SOC), ultrathin two-dimensional (2D) transitional metal chalcogenides (TMDs) are predicted to exhibit weak antilocalization (WAL) effect at low temperatures. The observation of WAL effect in VSe2 is challenging due to the relative weak SOC and three-dimensional (3D) transport nature in thick VSe2. Here, we report on the observation of quasi-2D transport and WAL effect in sublimed-salt-assisted low-temperature chemical vapor deposition (CVD) grown few-layered high-quality VSe2 nanosheets. The WAL magnitudes in magnetoconductance can be perfectly fitted by the 2D Hikami-Larkin-Nagaoka (HLN) equation in the presence of strong SOC, by which the spin-orbit scattering length lSO and phase coherence length lϕ have been extracted. The phase coherence length lϕ shows a power law dependence with temperature, lϕ∼ T-1/2, revealing an electron-electron interaction-dominated dephasing mechanism. Such sublimed-salt-assisted growth of high-quality few-layered VSe2 and the observation of WAL pave the way for future spintronic and valleytronic applications.
Keywords: VSe; electron−electron interactions; spin−orbit coupling; sublimed-salt-assisted chemical vapor deposition; weak antilocalization effect.